BF1205C_15 datasheet(11/22 Pages) JMNIC

Teilenummer	BF1205C

Bauteilbeschribung	Dual N-channel dual gate MOS-FET

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BF1205C_2

Product data sheet

Rev. 02 — 15 August 2006

11 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

8.2 Dynamic characteristics for ampliﬁer b

[1]

For the MOS-FET not in use: VG1-S(a) = 0 V; VDS(a) =0 V.

[2]

Measured in Figure 34 test circuit.

Table 11.

Dynamic characteristics for ampliﬁer b

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 13 mA.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

yfs

forward transfer admittance

Tj =25 °C

2833

43mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

-

2.0

2.5

pF

Cig2-ss

input capacitance at gate 2

f = 1 MHz

-

3.4

-

pF

Coss

output capacitance

f = 1 MHz

-

0.85

-

pF

Crss

reverse transfer capacitance f = 1 MHz

-

20

-

fF

Gtr

power gain

BS =BS(opt); BL =BL(opt)

[1]

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

31

35

39

dB

f = 400 MHz; GS = 2 mS; GL = 1 mS

28

32

36

dB

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

2428

32dB

NF

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS =0S

-

5

-

dB

f = 400 MHz; YS =YS(opt)

-

1.3

1.9

dB

f = 800 MHz; YS =YS(opt)

-

1.4

2.1

dB

Xmod

cross-modulation

input level for k=1%;fw = 50 MHz; funw = 60 MHz [2]

at 0 dB AGC

90

-

dB

µV

at 10 dB AGC

-

88

-

dB

µV

at 20 dB AGC

-

94

-

dB

µV

at 40 dB AGC

100

103

-

dB

µV

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