2SA1627_15 datasheet(2/3 Pages) UTC

Teilenummer	2SA1627

Bauteilbeschribung	PNP EPITAXIAL SILICON TRANSISTOR

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Hersteller	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SA1627

PNPEPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

2

QW-R204-010,B

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Capacitance

Cob

VCB= -10V, IE=0, f=1.0MHz

42

50

pF

Turn-On Time

ton

0.1

0.5

µs

Storage Time

tstg

3.5

5.0

µs

Fall Time

tf

Ic =-0.5A,RL=500Ω

IB1= -IB2= -0.1A

Vcc =-250V

0.08

0.5

µs

*2 : Pulsed PW≦350µs,Duty Cycle≦2%

CLASSIFICATION OF hFE1

RANK

M

L

K

RANGE

30-60

40-80

60-120

TYPICAL CHARACTERISTICS

-0.005 -0.01 -0.02

-0.05

-3.0

-0.03

Ic -Collector Current (A)

Collector And Base Saturation

Voltage vs.Collector Current

-0.1 -0.2

-0.5

-0.1

-0.3

-1.0

Ic =5IB

VBE(sat)

VcE(sat)

0

-2.0

-4.0

-6.0

-8.0

0

VCE -Collector to Emitter Voltage (V)

Collector Current vs.

Collector to Emitter Voltage

-20

-10

-40

-60

-80

-100

IB=0.2mA

IB=0.4mA

IB=0.6mA

IB=0.8mA

IB=1.0mA

IB=1.2mA

IB=1.4mA

IB=1.6mA

IB=1.8mA

VCE= -5.0V

Collector Current vs.

Base to Emitter Voltage

-0.003

-0.01

-0.03

-0.1

-0.3

-1.0

0 -0.2 -0.4 -0.6 -0.8

VBE -Base to Emitter Voltage (V)

-1.0 -1.2 -1.4 -1.6

300

100

-0.002 -0.005

-0.02

DC Durrent Gain vs. Collector Current

1

30

10

3

Ic -Collector Current (A)

-0.01

-0.05

-0.1 -0.2

-0.5 -1.0

-

2.0

1000

VCE= -5.0V

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