Datenblatt-Suchmaschine für elektronische Bauteile |
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BC856AS Datenblatt(PDF) 2 Page - Unisonic Technologies |
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BC856AS Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BC856AS Preliminary DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-108.b ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -65 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Power Dissipation PD 200 mW Operating Temperature Range TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 625 °C/W Note: Device mounted on FR-4 PCB minimum land pad. ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IB=0 -80 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 -65 V Emitter-Base Breakdown Voltage V(BR)EBO IE=1μA, IC=0 -5 V ON CHARACTERISTICS DC Current Gain hFE VCE=-5.0V, IC=-2.0mA 125 180 250 Collector-Emitter Saturation Voltage VCE(SAT) IC=-10mA, IB=-0.5mA -75 -300 mV IC=-100mA, IB=-5.0mA -250 -650 mV Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA, IB=-0.5mA -700 mV IC=-100mA, IB=-5.0mA -850 mV Base-Emitter Voltage VBE(ON) VCE=-5.0V, IC=-2.0mA -600 -650 -750 mV VCE=-5.0V, IC=-10mA -820 mV SMALL SIGNAL CHARACTERISTICS Collector-Cutoff Current ICES VCE=-80V -15 nA ICBO VCB=-30V -15 nA VCB=-30V, TA=150°C -4.0 µA Gain Bandwidth Product fT VCE=-5.0V, IC=-10mA, f=100MHz 100 MHz Collector-Base Capacitance CCB VCB=-10V, f=1.0MHz 3 pF Note: Short duration pulse test used to minimize self-heating effect. |
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