Datenblatt-Suchmaschine für elektronische Bauteile |
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TC4431EPA Datenblatt(PDF) 3 Page - Microchip Technology |
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TC4431EPA Datenblatt(HTML) 3 Page - Microchip Technology |
3 / 14 page 2002 Microchip Technology Inc. DS21424B-page 3 TC4431/TC4432 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage....................................................... 36V Input Voltage (Note 1)....................VDD + 0.3V to GND Package Power Dissipation (TA ≤ 70°C) PDIP ........................................................ 730mW CERDIP ................................................... 800mW SOIC........................................................ 470mW Package Thermal Resistance CERDIP RθJ-A........................................ 150°C/W CERDIP RθJ-C ......................................... 50°C/W PDIP RθJ-A............................................. 125°C/W PDIP RθJ-C............................................... 42°C/W SOIC RθJ-A ............................................ 250°C/W SOIC RθJ-C .............................................. 75°C/W Operating Temperature Range C Version .........................................0°C to +70°C E Version ..................................... -40°C to +85°C Storage Temperature Range ............. -65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC4431/TC4432 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C, with 4.5V ≤ VDD ≤ 30V, unless otherwise noted.. Symbol Parameter Min Typ Max Units Test Conditions Input VIH Logic 1, High Input Voltage 2.4 —— V VIL Logic 0, Low Input Voltage —— 0.8 V IIN Input Current (Note 1) -1 — 1 µA0V ≤ VIN ≤ 12V Output VOH High Output Voltage VDD – 1.0 VDD – 0.8 — VIOUT = 100mA VOL Low Output Voltage —— 0.025 V RO Output Resistance — 710 Ω IOUT = 10mA, VDD = 30V IPK Peak Output Current — — 3.0 1.5 — — A Source: VDD = 30V Sink: VDD = 30V IREV Latch-Up Protection Withstand Reverse Current 0.3 —— A Duty cycle ≤ 2%, t ≤ 300µsec Switching Time (Note 2) tR Rise Time — 25 40 nsec Figure 3-1 tF Fall Time — 33 50 nsec Figure 3-1 tD1 Delay Time — 62 80 nsec Figure 3-1 tD2 Delay Time — 78 90 nsec Figure 3-1 Power Supply IS Power Supply Current — — 2.5 0.3 4 0.4 mA VIN = 3V VIN = 0V VS Start-up Threshold — 8.4 10 V VDO Drop-out Threshold 7 7.7 — V Note 3 Note 1: For inputs >12V, add a 1k Ω resistor in series with the input. See “Typical Characteristics” graph for input current. 2: Switching times are ensured by design. 3: For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up circuit, otherwise, pin 3 must be left floating. |
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