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TEA1995T Datenblatt(PDF) 10 Page - NXP Semiconductors

Teilenummer TEA1995T
Bauteilbeschribung  GreenChip dual synchronous rectifier controller
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TEA1995T Datenblatt(HTML) 10 Page - NXP Semiconductors

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TEA1995T
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 30 July 2015
10 of 17
NXP Semiconductors
TEA1995T
GreenChip dual synchronous rectifier controller
11. Application information
A resonant switched mode power supply with the TEA1995T consists of a primary side
half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain low
conduction loss rectification, SR MOSFETs are used in the output stage. The TEA1995T
controls these SR MOSFETs.
The gate drive voltage for the SR switch is derived from the voltage difference between
the corresponding drain sense and source sense pins.
Special attention must be paid to the connection of the drain sense and source sense
pins. The voltages measured on these pins are used for gate drive voltage. Wrong
measurement results in a less efficient gate drive because the gate voltage is either too
low or too high. The connections to these pins must not interfere with the power wiring.
The power wiring conducts currents with high dI/dt values. It can easily cause
measurement errors resulting from induced voltages due to parasitic inductances. The
separate source-sense pins enable the direct sensing of the source voltage of the external
MOSFETs. Using the current carrying power ground tracks is not allowed.
11.1 Application diagram resonant application
Fig 5.
Typical resonant application with TEA1995T


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