Datenblatt-Suchmaschine für elektronische Bauteile |
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1N40AL-TM3-T Datenblatt(PDF) 3 Page - Unisonic Technologies |
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1N40AL-TM3-T Datenblatt(HTML) 3 Page - Unisonic Technologies |
3 / 5 page 1N40A Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R205-029.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 1 A Drain Current Pulsed (Note 2) IDM 4 A Avalanche Energy Single Pulsed (Note 3) EAS 40 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns SOT-223 1 W Power Dissipation TO-251 PD 25 W SOT-223 125 W/°C Derate above 25°C TO-251 PD 0.2 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 80mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-223 150 °C/W Junction to Ambient TO-251 θJA 110 °C/W SOT-223 125 °C/W Junction to Case TO-251 θJC 5 °C/W |
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