SI1012CR datasheet(3/9 Pages) TFUNK

Teilenummer	SI1012CR

Bauteilbeschribung	N-Channel 20 V (D-S) MOSFET

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Hersteller	TFUNK [Vishay Telefunken]

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Document Number: 67519

S13-0195-Rev. E, 28-Jan-13

www.vishay.com

3

Vishay Siliconix

Si1012CR

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current

0

0.2

0.4

0.6

0.8

0

2

4

6

8

10

12

14

V

GS - Gate-Source Voltage (V)

T

J = 25 °C

0

0.5

1

1.5

2

00.5

11.5

2

V

DS - Drain-to-Source Voltage (V)

V

GS = 5 V thru 2 V

V

GS = 1 V

V

GS = 1.5 V

0.20

0.40

0.60

0.80

00.5

11.5

2

I

D -Drain Current (A)

V

GS = 1.8 V

V

GS = 2.5 V

V

GS = 4.5 V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

1.0E-09

1.0E-08

1.0E-07

1.0E-06

1.0E-05

1.0E-04

0

4

7

11

14

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0

0.1

0.2

0.3

0.4

0.5

0

0.3

0.6

0.9

1.2

1.5

V

GS - Gate-to-Source Voltage (V)

T

C = 125 °C

T

C = - 55 °C

T

C = 25 °C

0

15

30

45

60

0

5

10

15

20

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

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