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SI1012CR Datenblatt(PDF) 3 Page - Vishay Telefunken |
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SI1012CR Datenblatt(HTML) 3 Page - Vishay Telefunken |
3 / 9 page Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 www.vishay.com 3 Vishay Siliconix Si1012CR This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 12 14 V GS - Gate-Source Voltage (V) T J = 25 °C 0 0.5 1 1.5 2 00.5 11.5 2 V DS - Drain-to-Source Voltage (V) V GS = 5 V thru 2 V V GS = 1 V V GS = 1.5 V 0.20 0.40 0.60 0.80 00.5 11.5 2 I D -Drain Current (A) V GS = 1.8 V V GS = 2.5 V V GS = 4.5 V Gate Current vs. Gate-Source Voltage Transfer Characteristics Capacitance 1.0E-09 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 0 4 7 11 14 V GS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 V GS - Gate-to-Source Voltage (V) T C = 125 °C T C = - 55 °C T C = 25 °C 0 15 30 45 60 0 5 10 15 20 V DS - Drain-to-Source Voltage (V) C iss C oss C rss |
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