SI1016CX datasheet(6/12 Pages) TFUNK

Teilenummer	SI1016CX

Bauteilbeschribung	Complementary N- and P-Channel 20 V (D-S) MOSFET

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Si1016CX

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Vishay Siliconix

S14-1174-Rev. C, 09-Jun-14

6

Document Number: 67535

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Safe Operating Area, Junction-to-Ambient

Power Derating, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

0.1

1

10

0.1

1

10

100

V

DS

-Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

T

C = 25 °C

Single Pulse

10 ms

100 μs

1 s

10 s, DC

BVDSS Limited

0

0.06

0.12

0.18

0.24

0

25

50

75

100

125

150

T

A - Ambient Temperature (°C)

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

Square Wave Pulse Duration (s)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

t1

t2

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 675 °C/W

3. TJM -TA =PDMZthJA(t)

t1

t2

4. Surface Mounted

Ähnliche Beschreibung - SI1016CX

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