SI6926ADQ datasheet(1/11 Pages) TFUNK

Teilenummer	SI6926ADQ

Bauteilbeschribung	Dual N-Channel 2.5-V (G-S) MOSFET

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Vishay Siliconix

Si6926ADQ

Document Number: 72754

S-81056-Rev. B, 12-May-08

www.vishay.com

1

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES

•

Halogen-free

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.030 at VGS = 4.5 V

4.5

0.033 at VGS = 3.0 V

4.2

0.035 at VGS = 2.5 V

3.9

0.043 at VGS = 1.8 V

3.6

Ordering Information: Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

G2

TSSOP-8

Top View

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

N-Channel MOSFET

Notes:

a. Surface Mounted on FR4 board, t

≤ 10 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

4.5

4.1

A

TA = 70 °C

3.6

3.3

Pulsed Drain Current (10 µs Pulse Width)

IDM

20

Continuous Source Current (Diode Conduction)a

IS

0.83

0.69

Maximum Power Dissipationa

TA = 25 °C

PD

1.0

0.83

W

TA = 70 °C

0.64

0.53

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

90

125

°C/W

Steady State

126

150

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

65

80

RoHS

COMPLIANT

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