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SI8424CDB Datenblatt(PDF) 4 Page - Vishay Telefunken |
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SI8424CDB Datenblatt(HTML) 4 Page - Vishay Telefunken |
4 / 11 page Si8424CDB www.vishay.com Vishay Siliconix S15-1692-Rev. C, 20-Jul-15 4 Document Number: 63894 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 0 0.01 0.02 0.03 0.04 0.05 012345 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 2 A 0.001 0 40 80 60 110 Time (s) 20 0.01 0.1 100 600 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 1 s DC |
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Ähnliche Beschreibung - SI8424CDB |
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