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SI4618DY Datenblatt(PDF) 4 Page - Vishay Telefunken

Teilenummer SI4618DY
Bauteilbeschribung  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Hersteller  TFUNK [Vishay Telefunken]
Direct Link  http://www.vishay.com
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Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4618DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0
0.6
1.2
1.8
2.4
3.0
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
3 V
0
10203040
50
ID - Drain Current (A)
VGS = 4.5 V
0.010
0.013
0.016
0.019
0.022
0.025
VGS = 10 V
0
2
4
6
8
10
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
ID = 8 A
VDS = 10 V
VDS = 20 V
VDS = 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
VGS - Gate-to-Source Voltage (V)
0.0
0.4
0.8
1.2
1.6
2.0
0
1234
5
TC = 25 °C
TC = - 55 °C
TC = 125 °C
Crss
VDS - Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
06
12
18
24
30
Coss
Ciss
TJ - Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
ID = 8 A
VGS = 10 V
VGS = 4.5 V


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