SI4618DY datasheet(6/15 Pages) TFUNK

Teilenummer	SI4618DY

Bauteilbeschribung	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Hersteller	TFUNK [Vishay Telefunken]

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Document Number: 74450

S09-2109-Rev. B, 12-Oct-09

Vishay Siliconix

Si4618DY

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

10

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.00

0.24

0.48

0.72

0.96

1.20

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

Ähnliche Teilenummer - SI4618DY

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI4618DY	149Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 29-Jan-07
	SI4618DY	276Kb / 15P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 12-Oct-09
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Ähnliche Teilenummer - SI4618DY

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