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SI5418DU Datenblatt(PDF) 3 Page - Vishay Telefunken |
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SI5418DU Datenblatt(HTML) 3 Page - Vishay Telefunken |
3 / 9 page Document Number: 69822 S-81448-Rev. B, 23-Jun-08 www.vishay.com 3 Vishay Siliconix Si5418DU New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS =10thru 5 V VGS =4 V VGS =3 V 0.010 0.012 0.014 0.016 0.018 0.020 0 8 16 24 32 40 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 5 10 15 20 25 ID =11.6A Qg - Total Gate Charge(nC) VDS =24 V VDS =15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) ID = 8 A VGS =10 V |
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