SI4559ADY datasheet(10/15 Pages) TFUNK

Teilenummer	SI4559ADY

Bauteilbeschribung	N- and P-Channel 60-V (D-S) MOSFET

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Document Number: 73624

S09-0393-Rev. B, 09-Mar-09

Vishay Siliconix

Si4559ADY

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Single Pulse Avalanche Capability

1

100

10

TA - Time In Avalanche (s)

0.001

0.0001

0.00001

0.000001

T

A

L . I

D

BV - V

DD

=

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