Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3636L Datenblatt(PDF) 3 Page - ON Semiconductor |
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2N3636L Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 6 page 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L http://onsemi.com 3 IC, COLLECTOR CURRENT (mA) 400 0.1 1 10 100 Figure 1. DC Current Gain 350 300 250 200 150 100 50 0 150 °C −55 °C 25 °C VCE = 10 V IC, COLLECTOR CURRENT (mA) 1.2 0.1 1 10 100 Figure 2. Base−Emitter Saturation Voltage −55 °C 25 °C 150 °C IC/IB = 10 1.0 0.8 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) 0.6 0.1 1 10 100 Figure 3. Collector−Emitter Saturation Voltage −55 °C 25 °C 150 °C IC, COLLECTOR CURRENT (mA) 1.1 0.1 1 10 100 Figure 4. Base−Emitter Voltage VCE = 1 V IC/IB = 10 −55 °C 25 °C 150 °C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IB, BASE CURRENT (mA) 1.0 0.01 0.10 1 10 Figure 5. Collector Saturation Region IC = 10 mA 100 mA 300 mA VBE, BASE−EMITTER VOLTAGE (V) 70 −5 −4 −3 0 Figure 6. Input Capacitance TJ = 25°C fTEST = 10 kHz −2 0.1 0.01 −1 0.5 0.4 0.3 0.2 0.1 0 60 50 40 30 20 10 0 |
Ähnliche Teilenummer - 2N3636L |
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Ähnliche Beschreibung - 2N3636L |
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