SI7810DN datasheet(2/5 Pages) TFUNK

Teilenummer	SI7810DN

Bauteilbeschribung	N-Channel 100-V (D-S) MOSFET

Download	5 Pages

Scroll/Zoom	100%

Hersteller	TFUNK [Vishay Telefunken]

Direct Link	http://www.vishay.com

Logo

2 / 5 page

www.vishay.com

2

Document Number: 70689

S-81544-Rev. C, 07-Jul-08

Vishay Siliconix

Si7810DN

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

24.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

µA

VDS = 100 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 5.4 A

0.052

0.062

Ω

VGS = 6 V, ID = 4.6 A

0.070

0.084

Forward Transconductancea

gfs

VDS = 15 V, ID = 5.4 A

12

S

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.78

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 50 V, VGS = 10 V, ID = 5.4 A

13.5

17

nC

Gate-Source Charge

Qgs

3

Gate-Drain Charge

Qgd

4.6

Turn-On Delay Time

td(on)

VDD = 50 V, RL = 50 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

10

15

ns

Rise Time

tr

15

25

Turn-Off DelayTime

td(off)

20

30

Fall Time

tf

15

25

Source-Drain Reverse Recovery Time

trr

IF = 3.2 A, dI/dt = 100 A/µs

45

90

Output Characteristics

0

4

8

12

16

20

0

1234

5

VGS = 10 thru 7 V

4 V

5 V

VDS - Drain-to-Source Voltage (V)

6 V

Transfer Characteristics

0

4

8

12

16

20

012

34

567

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Ähnliche Beschreibung - SI7810DN

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI2328DS	41Kb / 4P	N-Channel 100-V (D-S) MOSFET Rev. A, 25-Dec-01
	SIR870ADP_1209	481Kb / 13P	N-Channel 100 V (D-S) MOSFET Rev. A, 28-Nov-11
	SIR876DP	191Kb / 9P	N-Channel 100 V (D-S) MOSFET Rev. B, 22-Nov-10
	SIR882ADP	336Kb / 14P	N-Channel 100 V (D-S) MOSFET Rev. A, 15-Aug-11
	SI7456CDP	132Kb / 7P	N-Channel 100 V (D-S) MOSFET Rev. A, 05-Apr-10
Analog Power	AM90N10-07B	365Kb / 5P	N-Channel 100-V (D-S) MOSFET
Analog Power	AM290N10-02FP	317Kb / 5P	N-Channel 100-V (D-S) MOSFET
Vishay Siliconix	SUM70040M	173Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 17-Aug-15
	SUA70060E	200Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 06-Jun-16
	SUD70090E	201Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 01-Feb-16
	SI2392DS	245Kb / 10P	N-Channel 100 V (D-S) MOSFET Rev. A, 15-Apr-13

More results

SI7810DN Datenblatt(PDF) 2 Page - Vishay Telefunken

SI7810DN Datenblatt(HTML) 2 Page - Vishay Telefunken

Ähnliche Teilenummer - SI7810DN

Ähnliche Beschreibung - SI7810DN

Html Pages

1 2 3 4 5

Datenblatt Download

Link URL