1N6823

(MSASC150W100L)

1N6823R

(MSASC150W100LR)

100 Volts

150 Amps

Features

• Tungsten/Platinum schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

polarity (strap-to-cathode: 1N6823R)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

100

Volts

Working Peak Reverse Voltage

100

Volts

DC Blocking Voltage

100

Volts

Average Rectified Forward Current, Tc

≤125°C

150

Amps

derating, forward current, Tc

≥ 125°C

4

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

750

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

2

Amp

Junction Temperature Range

-65 to +150

°C

Storage Temperature Range

-65 to +150

°C

Thermal Resistance, Junction to Case:

1N6823

1N6823R

θ

JC

0.20

0.35

°C/W

Maximum Ratings @ 25

°C (unless otherwise specified)

Mechanical Outline

ThinKey™ 3

Datasheet# MSC1028A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW LEAKAGE

SCHOTTKY DIODE

Low expansion

coef. metal (W or

Mo), Ni plated

Cu/Invar/Cu,

Ni plated

ceramic