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BC817-40W Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer BC817-40W
Bauteilbeschribung  General Purpose NPN Transistor
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 1
1
Publication Order Number:
BC817−40W/D
BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
AEC-Q101 Qualified and Consult Factory for PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
VCBO
50
V
Emitter − Base Voltage
VEBO
5.0
V
Collector Current − Continuous
IC
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
PD
460
mW
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
272
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
− 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
CE M
G
G
CE
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
1
Device
Package
Shipping
ORDERING INFORMATION
BC817−40WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.


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