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BC817-40W Datenblatt(PDF) 1 Page - ON Semiconductor |
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BC817-40W Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. 1 1 Publication Order Number: BC817−40W/D BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor’s BC817−40W is a General Purpose NPN Transistor that is housed in the SC−70/SOT−323 package. Features • AEC-Q101 Qualified and Consult Factory for PPAP Capable • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V Collector Current − Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) PD 460 mW Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 272 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm2 www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER SC−70 CASE 419 STYLE 3 MARKING DIAGRAM (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. CE M G G CE = Specific Device Code M = Date Code G = Pb−Free Package 1 Device Package Shipping ORDERING INFORMATION† BC817−40WT1G SC−70 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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