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MC74HC4351 Datenblatt(PDF) 3 Page - ON Semiconductor |
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MC74HC4351 Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 13 page MC74HC4351 http://onsemi.com 3 MAXIMUM RATINGS* Symbol Parameter Value Unit VCC Positive DC Supply Voltage (Ref. to GND) (Ref. to VEE) – 0.5 to + 7.0 – 0.5 to 14.0 V VEE Negative DC Supply Voltage (Ref. to GND) – 7.0 to + 0.5 V VIS Analog Input Voltage VEE − 0.5 to VCC + 0.5 V Vin DC Input Voltage (Ref. to GND) – 1.5 to VCC + 1.5 V I DC Current Into or Out of Any Pin ± 25 mA PD Power Dissipation in Still Air,Plastic or Ceramic DIP† SOIC Package† 750 500 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) (Ceramic DIP) 260 300 _C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage (Ref. to GND) (Ref. to VEE) 2.0 2.0 6.0 12.0 V VEE Negative DC Supply Voltage (Ref. to GND) – 6.0 GND V VIS Analog Input Voltage VEE VCC V Vin Digital Input Voltage (Ref. to GND) GND VCC V VIO* Static or Dynamic Voltage Across Switch — 1.2 V TA Operating Temperature, All Package Types – 55 + 125 _C tr, tf Input Rise and Fall Time, VCC = 2.0 V Channel Select or Enable VCC = 4.5 V Inputs (Figure 9a) VCC = 6.0 V 0 0 0 1000 500 400 ns *For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND, Except Where Noted Symbol Parameter Test Conditions VCC V Guaranteed Limit Unit – 55 to 25_C v 85_C v 125_C VIH Minimum High−Level Input Voltage, Channel−Select or Enable Inputs Ron = Per Spec 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V VIL Maximum Low−Level Input Voltage, Channel−Select or Enable Inputs Ron = Per Spec 2.0 4.5 6.0 0.3 0.9 1.2 0.3 0.9 1.2 0.3 0.9 1.2 V Iin Maximum Input Leakage Current, Channel−Select or Enable Inputs Vin = VCC or GND, VEE = – 6.0 V 6.0 ± 0.1 ± 1.0 ± 1.0 μA ICC Maximum Quiescent Supply Current (per Package) Channel Select = VCC or GND Enables = VCC or GND VIS = VCC or GND VEE = GND VIO = 0 V VEE = – 6.0 6.0 6.0 2 8 20 80 40 160 μA NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D). This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir- cuit. For proper operation, Vin and Vout should be constrained to the ranges indicated in the Recom- mended Operating Conditions. Unused digital input pins must be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused Analog I/O pins may be left open or terminated. See Applica- tions Information. |
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