Datenblatt-Suchmaschine für elektronische Bauteile |
|
MSAFA1N100P3 Datenblatt(PDF) 1 Page - Microsemi Corporation |
|
MSAFA1N100P3 Datenblatt(HTML) 1 Page - Microsemi Corporation |
1 / 2 page www.MICROSEMI.com Santa Ana Division Data Sheet # MSC Updated: December 1999 2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989 MSAFA1N100P3 Maximum Ratings Features • Low On-State resistance • Avalanche and Surge Rated • High Frequency Switching • Ultra low Leakage Current • UIS rated • Available with Lot Acceptance Testing “L” Suffix • Available with “J” leads Applications • Implantable Cardio Defibrillator MOSFET Device 1 Amp 1000 V N-Channel enhancement mode high density Static Electrical Characteristics SYMBOL PARAMETER VALUE UNIT VDSS Drain - Source Voltage 1000 Volts VGS Gate - Source Voltage ±20 Volts ID1 Continuous Drain Current @ TC = 25 1 Amps ID2 Continuous Drain Current @ TC = 100 0.8 Amps IDM1 Pulsed Drain Current 4 Amps IAR Avalanche Current 1 Amps EAR Repetitive Avalanche Energy TBD mJ EAS Single Pulse Avalanche Energy TBD mJ TJ, TSTG Operating and Storage: Junction Temperature Range -55 to 150 C SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) 1000 Volts VGS(TH)2 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C) 3.4 Volts VGS(TH)1 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C) 2 3.5 4.5 Volts RDS(ON)1 Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C) 12.5 13.5 ohm RDS(ON)2 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C) 12.5 ohm RDS(ON)3 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C) 11.5 14 ohm RDS(ON)4 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C) 15 ohm RDS(ON)5 Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C) 23.5 ohm IDSS1 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C) 10 uA IDSS2 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C) 1 uA IDSS3 Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C) 100 uA IGSS1 Gate-Source Leakage Current (VGS = ±20V, VCE =0V) ±100 nA IGSS2 Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C 10 nA IGSS3 Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C 500 nA Testing and Screening (per lot) • 100% Testing at 25C, DC parameters • Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) |
Ähnliche Teilenummer - MSAFA1N100P3 |
|
Ähnliche Beschreibung - MSAFA1N100P3 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |