Datenblatt-Suchmaschine für elektronische Bauteile |
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MSAGZ52F120A Datenblatt(PDF) 2 Page - Microsemi Corporation |
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MSAGZ52F120A Datenblatt(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES VGS = 0 V, IC = 250 µA 1200 V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 350 µA 4.5 5.5 6.5 V Gate-to-Emitter Leakage Current IGES VGE = ± 20V DC, VCE = 0 TJ = 25 °C T J = 125 °C ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES VCE =0.8 •BV CES TJ = 25 °C VGE = 0 V T J = 125 °C 250 1000 µA Collector-to-Emitter Saturation Voltage (1) VCE(sat) VGE= 15V, IC= 25A T J = 25 °C IC= 25A T J = 125 °C IC= 60A T J = 25 °C IC= 30A T J = 125 °C 2.7 3.3 3.4 4.3 3.2 3.9 V Forward Transconductance (1) gfs VCE = 20 V; IC = 25 A 8.5 20 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz 1650 250 110 2200 380 160 pF INDUCTIVE LOAD, Tj= 125 °°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, VCE = 600 V, IC = 25 A, RG = 47 Ω, L= 100 µH note 2, 3 75 65 3.6 420 45 2.4 110 100 560 60 ns ns mJ ns ns mJ INDUCTIVE LOAD, Tj= 125 °°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, VCE = 600 V, IC = 50 A, RG = 47 Ω, L= 100 µH note 2, 3 95 90 10 420 45 4.2 ns ns mJ ns ns mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Qg Qge Qgc VGE = 15 V, VCE = 600V, IC = 25A 160 20 75 nC Antiparallel diode forward voltage (MSAHZ52F120A only) VF IE= 10 A T J = 25 °C IE= 10 A T J = 100 °C 2.4 2 3 V V Antiparallel diode reverse recovery time (MSAHZ52F120A only) trr IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 10 A, dIE/dt= 800 A/us, T J= 125 °C 60 TBD ns ns Antiparallel diode reverse recovery charge (MSAHZ52F120A only) Qrr IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 10 A, dIE/dt= 800 A/us, T J= 125 °C 800 TBD nC nC Antiparallel diode peak recovery current (MSAHZ52F120A only) IRM IE= 10 A, dIE/dt= 100 A/us, T J= 25 °C IE= 10 A, dIE/dt= 800 A/us, T J= 125 °C 22 TBD A A Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi Corp. does not manufacture the igbt die; contact company for details. MSAGZ52F120A MSAHZ52F120A |
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Ähnliche Beschreibung - MSAGZ52F120A |
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