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MSAGZ52F120A Datenblatt(PDF) 2 Page - Microsemi Corporation

Teilenummer MSAGZ52F120A
Bauteilbeschribung  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MSAGZ52F120A Datenblatt(HTML) 2 Page - Microsemi Corporation

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DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
BVCES
VGS = 0 V, IC = 250
µA
1200
V
Gate Threshold Voltage
VGE(th)
VCE = VGE, IC = 350
µA
4.5
5.5
6.5
V
Gate-to-Emitter Leakage Current
IGES
VGE =
± 20V
DC, VCE = 0
TJ = 25
°C
T J = 125
°C
±100
±200
nA
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
ICES
VCE =0.8
•BV
CES
TJ = 25
°C
VGE = 0 V
T J = 125
°C
250
1000
µA
Collector-to-Emitter Saturation Voltage (1)
VCE(sat)
VGE= 15V, IC= 25A
T J = 25
°C
IC= 25A
T J = 125
°C
IC= 60A
T J = 25
°C
IC= 30A
T J = 125
°C
2.7
3.3
3.4
4.3
3.2
3.9
V
Forward Transconductance (1)
gfs
VCE = 20 V; IC = 25 A
8.5
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0 V, VCE = 25 V, f = 1 MHz
1650
250
110
2200
380
160
pF
INDUCTIVE LOAD, Tj= 125
°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, VCE = 600 V,
IC = 25 A, RG = 47
Ω,
L= 100
µH note 2, 3
75
65
3.6
420
45
2.4
110
100
560
60
ns
ns
mJ
ns
ns
mJ
INDUCTIVE LOAD, Tj= 125
°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, VCE = 600 V,
IC = 50 A, RG = 47
Ω,
L= 100
µH note 2, 3
95
90
10
420
45
4.2
ns
ns
mJ
ns
ns
mJ
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Qg
Qge
Qgc
VGE = 15 V, VCE = 600V, IC = 25A
160
20
75
nC
Antiparallel diode forward voltage (MSAHZ52F120A
only)
VF
IE= 10 A
T J = 25
°C
IE= 10 A
T J = 100
°C
2.4
2
3
V
V
Antiparallel diode reverse recovery time
(MSAHZ52F120A only)
trr
IE= 10 A, dIE/dt= 100 A/us, T J= 25
°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125
°C
60
TBD
ns
ns
Antiparallel diode reverse recovery charge
(MSAHZ52F120A only)
Qrr
IE= 10 A, dIE/dt= 100 A/us, T J= 25
°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125
°C
800
TBD
nC
nC
Antiparallel diode peak recovery current
(MSAHZ52F120A only)
IRM
IE= 10 A, dIE/dt= 100 A/us, T J= 25
°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125
°C
22
TBD
A
A
Electrical Parameters @ 25
°°C (unless otherwise specified)
Notes
(1)
Pulse test, t
≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2)
switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3)
switching losses include “tail” losses
(4)
Microsemi Corp. does not manufacture the igbt die; contact company for details.
MSAGZ52F120A
MSAHZ52F120A


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