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CS1124YDR8G Datenblatt(PDF) 5 Page - ON Semiconductor

Teilenummer CS1124YDR8G
Bauteilbeschribung  Dual Variable?뭃eluctance Sensor Interface IC
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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CS1124YDR8G Datenblatt(HTML) 5 Page - ON Semiconductor

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CIRCUIT DESCRIPTION
Figure 3 shows the part operating near the minimum input
thresholds. As the sin wave input threshold is increased, the
low side clamps become active (Figure 4). Increasing the
amplitude further (Figure 5), the high−side clamp becomes
active. These internal clamps allow for voltages up to −250 V
and 250 V on the sensor side of the setup (with R1 = R2 =
22 k) (reference the diagram page 1).
Figure 6 shows the effect using the diagnostic (DIAG)
function has on the circuit. The input threshold (negative) is
switched from a threshold of −160 mV to +160 mV when
DIAG goes from a low to a high. There is no hysteresis when
DIAG is high.
Figure 3. Minimum Threshold Operation
IN1, 200 mV/div
OUT1, 2.0 V/div
20 ms/div
Figure 4. Low−Side Clamp
IN1, 5.0 V/div
OUT1, 2.0 V/div
20 ms/div
Figure 5. Low− and High−Side Clamps
IN1, 5.0 V/div
OUT1, 2.0 V/div
20 ms/div
Figure 6. Diagnostic Operation
DIAG
5.0 V/div
20 ms/div
IN1
1.0 V/div
OUT1
5.0 V/div


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