Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1430M Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1430M Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE1430M N-Channel 30-V MOSFET VER 1.1 1 Description The ACE1430M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications • DC/DC Conversion • Power Routing • Motor Drives Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID 14 A TA=70℃ 11 Pulsed Drain Current b IDM 50 A Continuous Source Current (Diode Conduction) a IS 3.8 A Power Dissipation a TA=25℃ PD 3 W TA=70℃ 1.9 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 40 °C/W Steady State 90 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
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