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MTB020N03KQ8 Datenblatt(PDF) 2 Page - Cystech Electonics Corp.

Teilenummer MTB020N03KQ8
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB020N03KQ8 Datenblatt(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C143Q8
Issued Date : 2015.11.13
Revised Date :
Page No. : 2/9
MTB020N03KQ8
CYStek Product Specification
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25
°C, VGS=10V
10.2
Continuous Drain Current @ TA=100
°C, VGS=10V
ID
6.5
Pulsed Drain Current
IDM
40 *1
Avalanche Current
IAS
10
A
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
EAS
15
Repetitive Avalanche Energy @ L=0.05mH
EAR
1.5 *2
mJ
TA=25
°C
3.1
Total Power Dissipation
TA=100
°C
PD
1.2
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1
. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Rth,j-c
25
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-a
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
30
-
-
VGS=0V, ID=250μA
VGS(th)
1.0
-
2.5
V
VDS = VGS, ID=250μA
GFS
-
9
-
S
VDS =5V, ID=8A
IGSS
-
-
±
10
VGS=±20V
-
-
1
VDS =30V, VGS =0V
IDSS
-
-
10
μA
VDS =24V, VGS =0V, Tj=85
°C
-
12.8
17
VGS =10V, ID=9A
*RDS(ON)
-
17.4
23
VGS =4.5V, ID=7A
Dynamic
Qg (VGS=10V) *1, 2
-
12
-
Qg (VGS=5V) *1, 2
-
6.9
Qgs *1, 2
-
1.8
-
Qgd *1, 2
-
3.4
-
nC
ID=9A, VDS=15V, VGS=10V
Ciss
-
450
-
Coss
-
79
-
Crss
-
60
-
pF
VGS=0V, VDS=15V, f=1MHz
Rg
-
8.8
-
Ω
f=1MHz


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