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MMSF7N03HD Datenblatt(PDF) 2 Page - ON Semiconductor |
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MMSF7N03HD Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 12 page MMSF7N03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − − 41 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − 0.02 − 1.0 10 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.0 2.0 − Vdc mV/ °C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 7.0 Adc) (VGS = 4.5 Vdc, ID = 3.5 Adc) RDS(on) − − 0.023 0.029 0.028 0.040 Ohms Forward Transconductance (VDS = 3 Vdc, ID = 2.5 Adc) gFS 3.0 12 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vd V 0Vd Ciss − 931 1190 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 371 490 Transfer Capacitance f = 1.0 MHz) Crss − 89 120 SWITCHING CHARACTERISTICS (Note 3.) Turn−On Delay Time td(on) − 15 30 ns Rise Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS =45Vdc tr − 93 185 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 9.1 Ω) td(off) − 35 70 Fall Time RG 9.1 Ω) tf − 40 80 Turn−On Delay Time td(on) − 9.0 − Rise Time (VDD = 10 Vdc, ID = 5.0 Adc, VGS =10Vdc tr − 53 − Turn−Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 56 − Fall Time RG 9.1 Ω) tf − 39 Gate Charge SFi 8 QT − 30 43 nC See Figure 8 (VDS = 16 Vdc, ID = 5.0 Adc, Q1 − 3.0 − (VDS 16 Vdc, ID 5.0 Adc, VGS = 10 Vdc) Q2 − 7.5 − Q3 − 6.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 2.) (IS = 7.0 Adc, VGS = 0 Vdc) (IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.82 0.69 1.0 − Vdc Reverse Recovery Time SFi 15 trr − 32 − ns See Figure 15 (IS = 7.0 Adc, VGS = 0 Vdc, ta − 24 − (IS 7.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb − 8.0 − Reverse Recovery Stored Charge QRR − 0.045 − µC 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. |
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