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FW389 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer FW389
Bauteilbeschribung  Complementary Dual Power MOSFET
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FW389 Datenblatt(HTML) 2 Page - ON Semiconductor

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FW389
No. A2066-2/8
Continued from preceding page
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
N-channel]
Total Gate Charge
Qg
VDS=50V, VGS=10V, ID=2A
10
nC
Gate-to-Source Charge
Qgs
1.4
nC
Gate-to-Drain “Miller” Charge
Qgd
2.1
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.78
1.2
V
Gata Resistance
Rg
VDS=0V, VGS=0V, f=1MHz
0
12
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--2A
4.7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--2A, VGS=--10V
230
300
mΩ
RDS(on)2
ID=--1A, VGS=--4.5V
240
336
mΩ
RDS(on)3
ID=--1A, VGS=--4V
250
355
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
1000
pF
Output Capacitance
Coss
77
pF
Reverse Transfer Capacitance
Crss
47
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
16
ns
Turn-OFF Delay Time
td(off)
110
ns
Fall Time
tf
40
ns
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--2A
21
nC
Gate-to-Source Charge
Qgs
2.8
nC
Gate-to-Drain “Miller” Charge
Qgd
4.4
nC
Diode Forward Voltage
VSD
IS=--2A, VGS=0V
--0.79
--1.2
V
Gata Resistance
Rg
VDS=0V, VGS=0V, f=1MHz
0
50
Fig.1 Unclamped Inductive Switching Test Circuit
[N-channel]
[P-channel]
50Ω
10V
0V
VDD
L
FW389
D
S
G
≥50Ω
RG
50
0V
--10V
≥50Ω
RG
VDD
L
FW389
D
G
S


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