Datenblatt-Suchmaschine für elektronische Bauteile |
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FW389 Datenblatt(PDF) 2 Page - ON Semiconductor |
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FW389 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 8 page FW389 No. A2066-2/8 Continued from preceding page Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max N-channel] Total Gate Charge Qg VDS=50V, VGS=10V, ID=2A 10 nC Gate-to-Source Charge Qgs 1.4 nC Gate-to-Drain “Miller” Charge Qgd 2.1 nC Diode Forward Voltage VSD IS=2A, VGS=0V 0.78 1.2 V Gata Resistance Rg VDS=0V, VGS=0V, f=1MHz 0 12 Ω [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 V Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--2A 4.7 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--2A, VGS=--10V 230 300 mΩ RDS(on)2 ID=--1A, VGS=--4.5V 240 336 mΩ RDS(on)3 ID=--1A, VGS=--4V 250 355 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 1000 pF Output Capacitance Coss 77 pF Reverse Transfer Capacitance Crss 47 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr 16 ns Turn-OFF Delay Time td(off) 110 ns Fall Time tf 40 ns Total Gate Charge Qg VDS=--50V, VGS=--10V, ID=--2A 21 nC Gate-to-Source Charge Qgs 2.8 nC Gate-to-Drain “Miller” Charge Qgd 4.4 nC Diode Forward Voltage VSD IS=--2A, VGS=0V --0.79 --1.2 V Gata Resistance Rg VDS=0V, VGS=0V, f=1MHz 0 50 Ω Fig.1 Unclamped Inductive Switching Test Circuit [N-channel] [P-channel] 50Ω 10V 0V VDD L FW389 D S G ≥50Ω RG 50 Ω 0V --10V ≥50Ω RG VDD L FW389 D G S |
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Ähnliche Beschreibung - FW389 |
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