LB1927 datasheet(2/11 Pages) ONSEMI

Teilenummer	LB1927

Bauteilbeschribung	3-phase Brushless Motor Driver

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Hersteller	ONSEMI [ON Semiconductor]

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LB1927

No.6197-2/11

Allowable Operating Ranges

at Ta = 25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Power supply voltage range 1

VCC

9.5 to 28

V

Regulator voltage output current

IREG

-30 to 0

mA

LD output current

ILD

0 to 15

mA

Electrical Characteristics

at Ta

= 25°C, VCC = VM = 24V

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Power supply current 1

ICC1

23

30

mA

Power supply current 2

ICC2

In STOP mode

3.5

5.0

mA

Output

Output saturation voltage 1

VOsat1

IO = 1.0A, VO (SINK) +VO (SOURCE)

2.0

2.5

V

Output saturation voltage 2

VOsat2

IO = 2.0A, VO (SINK) +VO (SOURCE)

2.6

3.2

V

Output leak current

IOleak

100

μA

Lower-side diode forward voltage 1

VD1

ID = -1.0A

1.2

1.5

V

Lower-side diode forward voltage 2

VD2

ID = -2.0A

1.5

2.0

V

5V regulator voltage output

Output voltage

VREG

IO = -5mA

4.65

5.00

5.35

V

Voltage fluctuation

ΔVREG1

VCC = 9.5 to 28V

30

100

mV

Load fluctuation

ΔVREG2

IO = -5 to -20mA

20

100

mV

Hall amplifier

Input bias current

IHB

-2

-0.5

μA

Common mode input voltage range

VICM

1.5

VREG-1.5

V

Hall input sensitivity

80

mVp-p

Hysteresis width

ΔVIN

15

24

42

mV

Input voltage L

→H

VSLH

12

mV

Input voltage H

→L

VSHL

-12

mV

PWM oscillator

Output High level voltage

VOH (PWM)

2.5

2.8

3.1

V

Output Low level voltage

VOL (PWM)

1.2

1.5

1.8

V

Oscillator frequency

F (PWM)

C = 3900pF

18

kHz

Amplitude

V (PWM)

1.05

1.30

1.55

Vp-p

CSD circuit

Operating voltage

VOH (CSD)

3.6

3.9

4.2

V

External capacitance charge

current

ICHG

-17

-12

-9

μA

Operating time

T (CSD)

C = 10

μF Design target value

3.3

s

Current limiter operation

Limiter

VRF

VCC-VM

0.45

0.5

0.55

V

Thermal shutdown operation

Thermal shutdown operating

temperature

TSD

Design target value (junction temperature)

150

180

°C

Hysteresis width

ΔTSD

Design target value (junction temperature)

50

°C

FG amplifier

Input offset voltage

VIO (FG)

-10

+10

mV

Input bias current

IB (FG)

-1

+1

μA

Output High level voltage

VOH (FG)

IFGO = -0.2mA

VREG-1.2

VREG-0.8

V

Output Low level voltage

VOL (FG)

IFGO = 0.2mA

0.8

1.2

V

FG input sensitivity

GAIN 100 times

3

mV

Next-stage Schmitt comparator

width

Design target value

100

180

250

mV

Operation frequency range

2

kHz

Open-loop gain

f (FG) = 2kHz

45

51

dB

Continued on next page.

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