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CS3524AGDW16 Datenblatt(PDF) 4 Page - ON Semiconductor |
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CS3524AGDW16 Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 8 page CS3524A http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (continued) (0°C ≤ TA ≤ +70°C, VIN = VCC = 20 V; unless otherwise specified.) Characteristic Unit Max Typ Min Test Conditions Current Limit Amplifier (continued) VSENSE = VO; unless otherwise specified Output Swing Minimum Total Range 0.5 − 5.0 V Open Loop Voltage Gain ΔVOUT = 1.0 to 4.0 V, RL ≥ 10 MΩ 70 80 − dB Delay Time (Note 4) ΔVIN = 300 mV − 300 − ns Output Section (Each Output) Collector Emitter Voltage IC = 100 μA 60 80 − V Collector Leakage Current VCE = 50 V − 0.1 20 μA Saturation IC = 20 mA IC = 200 mA − − 0.2 1.0 0.4 2.2 V V Emitter Output Voltage IE = 50 mA 17 18 − V Rise Time (Note 4) TA = 25°C, R = 2.0 kΩ − 200 − ns Fall Time (Note 4) TA = 25°C, R = 2.0 kΩ − 100 − ns Comparator Delay (Note 4) TA = 25°C, VCOMP to VOUT − 300 − ns Shutdown Delay (Note 4) TA = 25°C, VSHUT to VOUT − 200 − ns Shutdown Threshold TA = 25°C, RC = 2.0 kΩ 0.5 0.7 1.0 V Thermal Shutdown (Note 4) − − 165 − °C 4. These parameters are guaranteed by design but not 100% tested in production. TYPICAL PERFORMANCE CHARACTERISTICS Figure 2. Error Amplifier Voltage Gain vs. Frequency Over RF Figure 3. Duty Cycle vs. Input Voltage 100 1 k 10 k 100 k 1 M Frequency (Hz) 80 60 40 20 0 RF = ∞ RF = 1 M Ω RF = 300 kΩ RF = 100 kΩ RF = 30 kΩ VIN = 20 V TA = 25°C RF is impedance to ground. Values below 30 kΩ will begin to limit the maximum duty−cycle. 01 2 3 5 Input Voltage VIN 50 40 30 0 10 20 4 VIN = 20 V RT = 2700 Ω TA = 25°C CT = 10 μF CT = 1 μF |
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