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CS3524AGDW16 Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer CS3524AGDW16
Bauteilbeschribung  Voltage Mode PWM Control Circuit
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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ELECTRICAL CHARACTERISTICS (continued) (0°C ≤ TA ≤ +70°C, VIN = VCC = 20 V; unless otherwise specified.)
Characteristic
Unit
Max
Typ
Min
Test Conditions
Current Limit Amplifier (continued)
VSENSE = VO; unless otherwise specified
Output Swing
Minimum Total Range
0.5
5.0
V
Open Loop Voltage Gain
ΔVOUT = 1.0 to 4.0 V, RL ≥ 10 MΩ
70
80
dB
Delay Time (Note 4)
ΔVIN = 300 mV
300
ns
Output Section (Each Output)
Collector Emitter Voltage
IC = 100 μA
60
80
V
Collector Leakage Current
VCE = 50 V
0.1
20
μA
Saturation
IC = 20 mA
IC = 200 mA
0.2
1.0
0.4
2.2
V
V
Emitter Output Voltage
IE = 50 mA
17
18
V
Rise Time (Note 4)
TA = 25°C, R = 2.0 kΩ
200
ns
Fall Time (Note 4)
TA = 25°C, R = 2.0 kΩ
100
ns
Comparator Delay (Note 4)
TA = 25°C, VCOMP to VOUT
300
ns
Shutdown Delay (Note 4)
TA = 25°C, VSHUT to VOUT
200
ns
Shutdown Threshold
TA = 25°C, RC = 2.0 kΩ
0.5
0.7
1.0
V
Thermal Shutdown (Note 4)
165
°C
4. These parameters are guaranteed by design but not 100% tested in production.
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. Error Amplifier Voltage Gain vs.
Frequency Over RF
Figure 3. Duty Cycle vs. Input Voltage
100
1 k
10 k
100 k
1 M
Frequency (Hz)
80
60
40
20
0
RF = ∞
RF = 1 M Ω
RF = 300 kΩ
RF = 100 kΩ
RF = 30 kΩ
VIN = 20 V
TA = 25°C
RF is impedance to ground.
Values below 30 kΩ will
begin to limit the maximum
duty−cycle.
01
2
3
5
Input Voltage VIN
50
40
30
0
10
20
4
VIN = 20 V
RT = 2700 Ω
TA = 25°C
CT = 10 μF
CT = 1 μF


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