Datenblatt-Suchmaschine für elektronische Bauteile |
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54ABT652J-QML Datenblatt(PDF) 6 Page - National Semiconductor (TI) |
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54ABT652J-QML Datenblatt(HTML) 6 Page - National Semiconductor (TI) |
6 / 17 page Absolute Maximum Ratings (Note 2) Storage Temperature −65˚C to +150˚C Ambient Temperature under Bias −55˚C to +125˚C Junction Temperature under Bias Ceramic −55˚C to +175˚C V CC Pin Potential to Ground Pin −0.5V to +7.0V Input Voltage (Note 3) −0.5V to +7.0V Input Current (Note 3) −30 mA to +5.0 mA Voltage Applied to Any Output in the Disable or or Power-Off State −0.5V to +5.5V in the HIGH State −0.5V to V CC Current Applied to Output in LOW State (Max) twice the rated I OL (mA) DC Latchup Source Current −500 mA Over Voltage Latchup (I/O) 10V Recommended Operating Conditions Free Air Ambient Temperature Military −55˚C to +125˚C Supply Voltage Military +4.5V to +5.5V Minimum Input Edge Rate ( ∆V/∆t) Data Input 50 mV/ns Enable Input 20 mV/ns Clock Input 100 mV/ns Note 2: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 3: Either voltage limit or current limit is sufficient to protect inputs. DC Electrical Characteristics Symbol Parameter ABT652 Units V CC Conditions Min Typ Max V IH Input HIGH Voltage 2.0 V Recognized HIGH Signal V IL Input LOW Voltage 0.8 V Recognized LOW Signal V CD Input Clamp Diode Voltage −1.2 V Min I IN = −18 mA (Non I/O Pins) V OH Output HIGH 54ABT 2.5 V Min I OH = −3 mA, (An,Bn) Voltage 54ABT 2.0 I OH = −24 mA, (An,Bn) V OL Output LOW 54ABT 0.55 V Min I OL = 48 mA, (An,Bn) Voltage I IH Input HIGH Current 2 µA Max V IN = 2.7V (Non-I/O Pins) (Note 4) V IN = VCC (Non-I/O Pins) I BVI Input HIGH Current 7 µA Max V IN = 7.0V (Non-I/O Pins) Breakdown Test I BVIT Input HIGH Current 100 µA Max V IN = 5.5V (An,Bn) Breakdown Test (I/O) I IL Input LOW Current −2 µA Max V IN = 0.5V (Non-I/O Pins) (Note 4) V IN = 0.0V (Non-I/O Pins) I IH +IOZH Output Leakage Current 50 µA 0V–5.5V V OUT = 2.7V (An,Bn); OEBA = 2.0V and OEAB = GND = 2.0V I IL +IOZL Output Leakage Current −50 µA 0V–5.5V V OUT = 0.5V (An,Bn); OEBA = 2.0V and OEAB = GND = 2.0V I OS Output Short-Circuit Current −50 −180 mA Max V OUT = 0V (An,Bn) I CEX Output HIGH Leakage Current 50 µA Max V OUT = VCC (An,Bn) I CCH Power Supply Current 250 µA Max All Outputs HIGH I CCL Power Supply Current 30 mA Max All Outputs LOW I CCZ Power Supply Current 250 µA Max Outputs TRI-STATE; All others at V CC or GND I CCT Additional I CC/Input 2.5 mA Max V I = VCC − 2.1V All others at V CC or GND Note 4: Guaranteed but not tested. Note 5: For 8 outputs toggling, ICCD < 1.4 mA/MHz. Note 6: Guaranteed, but not tested. www.national.com 6 |
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