Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD1600N10ALZ Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDD1600N10ALZ Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2012 Fairchild Semiconductor Corporation FDD1600N10ALZ Rev. C3 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD1600N10ALZ 1600N10ALZ DPAK Tape and Reel 330 mm 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 100 - - V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25oC- 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V - - 1 A VDS = 80 V, VGS = 0 V, TC = 125oC - - 500 IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 A VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A1.4 - 2.8 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.4 A - 124 160 m VGS = 5 V, ID = 2.1 A - 175 375 gFS Forward Transconductance VDS = 10 V, ID = 6.8 A - 19.6 - S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz - 169 225 pF Coss Output Capacitance - 43 55 pF Crss Reverse Transfer Capacitance - 2.04 - pF Coss(er) Energy Related Output Capacitance VDS = 50 V, VGS = 0 V 85 - pF Qg(tot) Total Gate Charge at 10V VGS = 10 V VDD = 50 V, ID = 6.8 A (Note 4) -2.78 3.61 nC Qg(tot) Total Gate Charge at 5V VGS = 5 V 1.5 1.95 nC Qgs Gate to Source Gate Charge - 0.72 - nC Qgd Gate to Drain “Miller” Charge - 0.56 - nC Vplateau Gate Plateau Volatge - 4.02 - V Qsync Total Gate Charge Sync. VDS = 0 V, ID = 3.4 A - 2.5 - nC Qoss Output Charge VDS = 50 V, VGS = 0 V - 5.2 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 2.1 - td(on) Turn-On Delay Time VDD = 50 V, ID = 6.8 A, VGS = 10 V, RG = 4.7 (Note 4) - 7 24 ns tr Turn-On Rise Time - 2 14 ns td(off) Turn-Off Delay Time - 13 36 ns tf Turn-Off Fall Time - 2 14 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.8 A - - 1.3 V trr Reverse Recovery Time VGS = 0 V, ISD = 6.8 A, VDS = 50 V, dIF/dt = 100 A/s -37 - ns Qrr Reverse Recovery Charge - 42 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS =3.18 A, RG = 25 , starting TJ = 25C. 3. ISD 6.8 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. |
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Ähnliche Beschreibung - FDD1600N10ALZ |
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