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TPA2005D1DGNRQ1 Datenblatt(PDF) 4 Page - Texas Instruments |
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TPA2005D1DGNRQ1 Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 37 page TPA2005D1-Q1 SLOS474D – AUGUST 2005 – REVISED DECEMBER 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT In active mode –0.3 6 V VDD Supply voltage(2) In SHUTDOWN mode –0.3 7 V VI Input voltage –0.3 VDD + 0.3 V V Non T-suffix –40 85 Operating free-air TA °C temperature T-suffix –40 105 TJ Operating junction temperature –40 150 °C 2.5 ≤ VDD ≤ 4.2 V 3.2 (Minimum) Ω RL Load resistance 4.2 < VDD ≤ 6 V 6.4 (Minimum) Ω Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) For the MSOP (DGN) package option, the maximum VDD should be limited to 5 V if short-circuit protection is desired. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per AEC Q100-002(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per AEC Q100-011 ±1000 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.3 Recommended Operating Conditions MIN MAX UNIT VDD Supply voltage 2.5 5.5 V VIH High-level input voltage SHUTDOWN 2 VDD V VIL Low-level input voltage SHUTDOWN 0 0.7 V RI Input resistor Gain ≤ 20 V/V (26 dB) 15 k Ω VIC Common-mode input voltage range VDD = 2.5 V, 5.5 V, CMRR ≤ –49 dB 0.5 VDD – 0.8 V Non T-suffix –40 85 TA Operating free-air temperature °C T-suffix –40 105 7.4 Thermal Information TPA2005D1-Q1 DRB (SON) DGN THERMAL METRIC(1) (MSOP UNIT PowerPAD) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 49.5 57 °C/W RθJC(top) Junction-to-case (top) thermal resistance 62.1 53.8 °C/W RθJB Junction-to-board thermal resistance 24.8 33.7 °C/W ψJT Junction-to-top characterization parameter 1.3 1.9 °C/W ψJB Junction-to-board characterization parameter 24.9 33.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.9 6.4 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2005–2015, Texas Instruments Incorporated Product Folder Links: TPA2005D1-Q1 |
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