Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847PN Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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BC847PN Datenblatt(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page BC847PN Jul-02-2001 1 NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation VPS05604 6 3 1 5 4 2 EHA07177 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 EHA07193 12 3 4 5 6 W1s Direction of Unreeling Top View Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Position in tape: pin 1 opposite of feed hole side Type Marking Pin Configuration Package BC847PN 1Ps 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Value Symbol Unit V Collector-emitter voltage VCEO 45 Collector-base voltage 50 VCBO Collector-emitter voltage VCES V 50 VEBO V Emitter-base voltage 5 mA DC collector current IC 100 200 Peak collector current ICM Total power dissipation, TS = 115 °C mW Ptot 250 Tj 150 Junction temperature °C -65 ... 150 Storage temperature Tstg Thermal Resistance Junction - soldering point1) RthJS 140 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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