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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BCM846S Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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BCM846S Datenblatt(HTML) 1 Page - Infineon Technologies AG |
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Aug-30-2002 1 BCM846S VPS05604 6 3 1 5 4 2 NPN Silicon AF Transistor Array Precision matched transistor pair: IC 10% For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S EHA07178 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 V Collector-emitter voltage VCES 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 6 Collector current IC 100 mA Peak collector current ICM 200 Total power dissipation- TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 140 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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