Si53019-A02A

4

Rev. 1.1

1. Electrical Specifications

Table 1. DC Operating Characteristics1

Parameter

Symbol

Condition

Min

Max

Unit

3.3 V Core Supply Voltage

VDD/VDD_A

3.3 V ±5%

3.135

3.465

V

3.3 V Input High Voltage

2.0

V

3.3 V Input Low Voltage

VSS–0.3

0.8

V

Input Leakage Current2

–5

+5

µA

3.3 V Input High Voltage3

0.7

V

3.3 V Input Low Voltage3

VSS–0.3

0.35

V

3.3 V Input Low Voltage

0

0.9

V

3.3 V Input Med Voltage

1.3

1.8

V

3.3 V Input High Voltage

2.4

V

3.3 V Output High Voltage4

2.4

—

V

3.3 V Output Low Voltage4

—

0.4

V

Input Capacitance5

2.5

4.5

pF

Output Capacitance5

2.5

4.5

pF

Pin Inductance

—7

nH

Ambient Temperature

No Airflow

0

70

°C

Notes:

1.

VDD_IO applies to the low-power NMOS push-pull HCSL compatible outputs.

2.

Input Leakage Current does not include inputs with pull-up or pull-down resistors. Inputs with resistors should state

current requirements.

3.

4.

Signal edge is required to be monotonic when transitioning through this region.

5.

Ccomp capacitance based on pad metalization and silicon device capacitance. Not including pin capacitance.