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CDCLVP2102RGTT Datenblatt(PDF) 5 Page - Texas Instruments |
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CDCLVP2102RGTT Datenblatt(HTML) 5 Page - Texas Instruments |
5 / 30 page CDCLVP2102 www.ti.com SCAS881C – AUGUST 2009 – REVISED JANUARY 2016 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage(2) –0.5 4.6 V VIN Input voltage(3) –0.5 VCC + 0.5 V VOUT Output voltage(3) –0.5 VCC + 0.5 V IIN Input current 20 mA IOUT Output current 50 mA TA Specified free-air temperature (no airflow) –40 85 °C TJ Maximum junction temperature 125 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All supply voltages must be supplied simultaneously. (3) The input and output negative voltage ratings may be exceeded if the input clamp-current and output clamp-current ratings are observed. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- 1500 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Supply voltage 2.375 2.5/3.3 3.60 V TA Ambient temperature –40 85 °C TPCB PCB temperature (measured at thermal pad) 105 °C 6.4 Thermal Information CDCLVP2102 THERMAL METRIC(1)(2)(3) RGT (VQFN) UNIT 16 PINS RθJA Junction-to-ambient thermal resistance (0 LFM) 51.8(4) °C/W RθJC(top) Junction-to-case (top) thermal resistance 79 °C/W RθJP (5) Junction-to-pad thermal resistance 6.12(4) °C/W ψJT Junction-to-top characterization parameter 1.4 °C/W ψJB Junction-to-board characterization parameter 19 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.12 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953). (2) The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board). (3) Connected to GND with four thermal vias (0.3-mm diameter). (4) 2 × 2 vias on pad (5) RθJP (junction-to-pad) is used for the VQFN package, because the primary heat flow is from the junction to the GND pad of the VQFN package. Copyright © 2009–2016, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CDCLVP2102 |
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