Datenblatt-Suchmaschine für elektronische Bauteile |
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TS3310ITD1022T Datenblatt(PDF) 8 Page - Silicon Laboratories |
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TS3310ITD1022T Datenblatt(HTML) 8 Page - Silicon Laboratories |
8 / 20 page TS3310 Page 8 TS3310 Rev. 1.1 Minimum Start-Up Voltage vs Source Resistance : VSTORE=3V 2.0 1.5 1.0 0.5 0 Source Resistance - kΩ 0 5 10 15 20 Minimum Start-Up Voltage vs Source Resistance : VSTORE=1.8V 2.0 1.5 1.0 0.5 0 Source Resistance - kΩ 0 5 10 15 20 TYPICAL PERFORMANCE CHARACTERISTICS Circuit B Circuit A Circuit A Circuit B Minimum Start-Up Voltage vs STORE Output Current Circuit A with 10Ω Source Resistance (STORE=5V) ISTORE - mA 0.001 0.01 0.1 1 10 100 3.6 3.0 2.7 2.4 1.5 1.8 2.1 3.3 Minimum Start-Up Voltage vs STORE Output Current Circuit B with 10Ω Source Resistance (STORE=5V) 3.0 2.5 2.0 1.5 ISTORE - mA 0.001 0.01 0.1 1 10 -40°C -40°C +25°C +25°C +85°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. +85°C Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF --- |
Ähnliche Teilenummer - TS3310ITD1022T |
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Ähnliche Beschreibung - TS3310ITD1022T |
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