STP28N60DM2 datasheet(4/20 Pages) STMICROELECTRONICS

Teilenummer	STP28N60DM2

Bauteilbeschribung	Extremely low gate charge and input capacitance

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Electrical characteristics

STB28N60DM2, STP28N60DM2, STW28N60DM2

4/20

DocID027040 Rev 4

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 10.5 A

0.13

0.16

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

1500

-

pF

Coss

Output capacitance

-

70

-

Crss

Reverse transfer

capacitance

-

1.6

-

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

134

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

4.6

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 21 A,

VGS = 10 V (see Figure 19:

"Test circuit for gate charge

behavior")

-

34

-

nC

Qgs

Gate-source charge

-

8

-

Qgd

Gate-drain charge

-

18.5

-

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 10.5 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 18: "Test circuit for

resistive load switching times"

and Figure 23: "Switching time

waveform")

-

16

-

ns

tr

Rise time

-

7.3

-

td(off)

Turn-off delay time

-

53

-

tf

Fall time

-

9.3

-

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