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STD16N60M2 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STD16N60M2 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 16 page March 2015 DocID027191 Rev 2 1/16 This is information on a product in full production. www.st.com STD16N60M2 N- channel 600 V, 0.280 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD16N60M2 600 V 0.320 Ω 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STD16N60M2 16N60M2 DPAK Tape and reel AM15572v1_tab D(2, TAB) G(1) S(3) |
Ähnliche Teilenummer - STD16N60M2 |
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Ähnliche Beschreibung - STD16N60M2 |
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