Datenblatt-Suchmaschine für elektronische Bauteile |
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STD28P3LLH6AG Datenblatt(PDF) 7 Page - STMicroelectronics |
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STD28P3LLH6AG Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 15 page STD28P3LLH6AG Electrical characteristics DocID028397 Rev 1 7/15 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed. |
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