Datenblatt-Suchmaschine für elektronische Bauteile |
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STAP85025S Datenblatt(PDF) 3 Page - STMicroelectronics |
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STAP85025S Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 13 page DocID15795 Rev 5 3/13 STAP85025S Electrical data 13 1 Electrical data 1.1 Maximum ratings 1.2 Thermal data Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage -0.5 to +15 V ID Drain current 7 A PDISS Power dissipation (@ TC = 70 °C) 79 W TJ Max. operating junction temperature 165 °C TSTG Storage temperature -65 to +150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Junction-case thermal resistance 1.2 °C/W |
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