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BUZ323 Datenblatt(PDF) 8 Page - Infineon Technologies AG

Teilenummer BUZ323
Bauteilbeschribung  SIPMOS Power Transistor
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ323 Datenblatt(HTML) 8 Page - Infineon Technologies AG

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Semiconductor Group
8
03/99
BUZ 323
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 15 A, VDD = 50 V
RGS = 25 Ω, L = 6.14 mH
20
40
60
80
100
120
°C
160
T
j
0
100
200
300
400
500
600
mJ
800
E
AS
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 22 A
0
20
40
60
80
100
120
140 nC 170
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
-60
-20
20
60
100
°C
160
T
j
360
370
380
390
400
410
420
430
440
450
460
V
480
V
(BR)DSS


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