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STD7ANM60N Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STD7ANM60N
Bauteilbeschribung  Low input capacitance and gate charge
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
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STB7ANM60N, STD7ANM60N
Electrical characteristics
20
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
5
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
20
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 5 A, V
GS
= 0
-
1.3
V
t
rr
Reverse recovery time
I
SD
= 5 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 20)
-
213
ns
Q
rr
Reverse recovery charge
-
1.5
μC
I
RRM
Reverse recovery current
-
14
A
t
rr
Reverse recovery time
I
SD
= 5 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 20)
-
265
ns
Q
rr
Reverse recovery charge
-
1.8
μC
I
RRM
Reverse recovery current
-
14
A


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