Datenblatt-Suchmaschine für elektronische Bauteile |
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STD80N6F6 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STD80N6F6 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 15 page DocID023471 Rev 2 5/15 STD80N6F6 Electrical characteristics 15 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I SD Source-drain current - 80 A I SDM (1) 1. Current limited by package. Source-drain current (pulsed) - 320 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 80 A, V GS = 0 - 1.3 V t rr Reverse recovery time I SD = 80 A, V DD = 48 V di/dt = 100 A/μs, T j = 150 °C -46 ns Q rr Reverse recovery charge - 65 nC I RRM Reverse recovery current - 2.8 A |
Ähnliche Teilenummer - STD80N6F6 |
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Ähnliche Beschreibung - STD80N6F6 |
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