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STB23N80K5 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STB23N80K5
Bauteilbeschribung  N-channel 800 V, 0.23typ., 16 A MDmesh??K5 Power MOSFET in a D짼PAK package
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STB23N80K5
Electrical characteristics
DocID028291 Rev 1
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Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
16
A
ISDM(1)
Source-drain current
(pulsed)
-
64
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 16 A
-
1.5
V
trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
-
410
ns
Qrr
Reverse recovery charge
-
7
µC
IRRM
Reverse recovery current
-
34
A
trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
650
ns
Qrr
Reverse recovery charge
-
10
µC
IRRM
Reverse recovery current
-
32
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±1 mA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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