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STD85N10F7AG Datenblatt(PDF) 5 Page - STMicroelectronics |
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STD85N10F7AG Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID027030 Rev 2 5/16 STD85N10F7AG Electrical characteristics 16 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 70 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 280 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 70 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 70 A, di/dt = 100 A/µs VDD = 80 V, Tj=150 °C (see Figure 18) -70 ns Qrr Reverse recovery charge - 125 nC IRRM Reverse recovery current - 3.6 A |
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