Datenblatt-Suchmaschine für elektronische Bauteile |
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STFU18N65M2 Datenblatt(PDF) 7 Page - STMicroelectronics |
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STFU18N65M2 Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 12 page STFU18N65M2 Electrical characteristics DocID027562 Rev 2 7/12 Figure 8: Capacitance variations Figure 9: Output capacitance stored energy Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Normalized V(BR)DSS vs temperature C 1000 100 10 1 0.1 10 100 V DS (V) (pF) 1 C iss C oss C rss GIPG161220141520ALS 1 2 3 4 5 6 0 0 100 V DS (V) 400 200 300 500 600 E OSS (µJ) GIPG161220141616ALS 0.6 0.7 0.8 0.9 1.0 1.1 V GS(th) -75 T J(°C) (norm) -25 75 25 125 I D = 250 µ A GIPG161220141528ALS 0.2 0.6 1.0 1.4 1.8 2.2 R DS(on) -75 T J(°C) (norm) -25 75 25 125 V GS = 10 V GIPG161220141538ALS I SD (A) 0.4 0.6 0.8 1.0 1.2 T J=150°C T J =-50°C T J=25°C V SD (V) 0 2 4 6 8 10 12 GIPG121620141553ALS -75 T J(°C) -25 75 25 125 0.88 0.92 0.96 1.00 1.04 1.08 V (BR)DSS (norm) I D = 1 m A GIPG121620141601ALS |
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