Datenblatt-Suchmaschine für elektronische Bauteile |
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STPSC12H065CT Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPSC12H065CT Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPSC12H065C 2/8 DocID024809 Rev 3 1 Characteristics When the diodes 1 and 2 are used simultaneously: T j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c) To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.192 x IF 2 (RMS) Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current Tc = 135 °C (1), DC Per diode 6 A Tc = 135 °C (2), DC Per device 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 60 52 400 A IFRM Repetitive peak forward current Tc = 135 °C (1), T j = 175 °C, = 0.1 25 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature(3) -40 to +175 °C 1. Value based on Rth(j-c) max (per diode) 2. Value based on Rth(j-c) max (per device) 3. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – -------------------------- Table 3. Thermal resistance parameters Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case Per diode 1.6 2.4 °C/W Per device 0.875 1.275 Rth(c) Coupling - 0.15 Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -5 60 µA Tj = 150 °C - 50 250 VF (2) Forward voltage drop Tj = 25 °C IF = 6 A - 1.56 1.75 V Tj = 150 °C - 1.98 2.5 1. tp = 10 ms, < 2% 2. tp = 500 µs, < 2% |
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