MCR08MT1 datasheet(5/9 Pages) KERSEMI

Teilenummer	MCR08MT1

Bauteilbeschribung	Sensitive Gate Silicon Controlled Rectifiers

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Hersteller	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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5 / 9 page

MCR08B, MCR08M

5

80

20

–40

–20

0

40

60

110

80

20

–40

–20

0

40

60

110

1000

100

1.0

0.7

1000

10

0.1

IGT, GATE TRIGGER CURRENT (µA)

1.0

100

TJ, JUNCTION TEMPERATURE (°C)

0.65

0.6

0.55

0.5

0.45

0.4

0.35

0.3

VAK = 12 V

RL = 100 Ω

TJ = 25°C

10

2.0

1.0

0

TJ, JUNCTION TEMPERATURE, (°C)

0.7

0.6

0.5

0.4

80

20

–40

–20

0

40

60

110

0.3

1.0

0.1

0.01

100

0.1

0.0001

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

1.0

0.5

0.3

0.2

0.1

0

0.9

0.8

0.7

0.5

0.4

0.3

0.2

0.1

0.4

0.6

Figure 8. Power Dissipation

Figure 9. Thermal Response Device

Mounted on Figure 1 Printed Circuit Board

t, TIME (SECONDS)

dc

180

°

α = 30°

60

°

0

0.001

0.01

1.0

10

RGK = 1000 Ω, RESISTOR

CURRENT INCLUDED

WITHOUT GATE RESISTOR

VAK = 12 V

RL = 100 Ω

α

α = CONDUCTION

ANGLE

VAK = 12 V

RL = 3.0 kΩ

90

°

120

°

Figure 10. Typical Gate Trigger Voltage

versus Junction Temperature

Figure 11. Typical Normalized Holding Current

versus Junction Temperature

Figure 12. Typical Range of VGT

versus Measured IGT

Figure 13. Typical Gate Trigger Current

versus Junction Temperature

VAK = 12 V

RL = 100 Ω

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