Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1512E Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1512E Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.1 1 Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • V DS (V)=20V • I D=6.5A (VGS=4.5V) • R DS(ON) <21 mΩ (V GS=4.5V) • R DS(ON) <25 mΩ (V GS=2.5V) • R DS(ON) <33 mΩ (V GS=1.8V) • ESD Protected : 2000V Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous)*AC TA=25℃ ID 6.5 A TA=70℃ 5.2 Drain Current (Pulsed)*B IDM 24 A Power Dissipation TA=25℃ PD 1 W TA=70℃ 0.64 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 |
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