Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1551A Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1551A Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE1551A N-Channel Enhancement Mode MOSFET VER 1.3 1 Description The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Features • N-Channel 20V/0.95A,RDS(ON) =380mΩ@V GS=4.5V 20V/0.75A,RDS(ON) =450mΩ@V GS=2.5V 20V/0.65A,RDS(ON) =800mΩ@V GS=1.8V 20V/0.65A,RDS(ON) =1000mΩ@V GS=1.5V • Super high density cell design for extremely low R DS(ON) • Exceptional on-resistance and maximum DC current capability Applications • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter |
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